首页 >MRF6P21190HR6>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MRF6P21190HR6 | RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET 2110-2170MHz,44WAVG.,28V2xW-CDMALATERALN-CHANNELRFPOWERMOSFET DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | |
MRF6P21190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | |
MRF6P21190HR6 | 包装：卷带（TR） 封装/外壳：NI-1230 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 68V 2.12GHZ NI-1230 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
RF Power Field Effect Transistor | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale |
产品属性
- 产品编号：
MRF6P21190HR6
- 制造商：
NXP USA Inc.
- 类别：
分立半导体产品 > 晶体管 - FET，MOSFET - 射频
- 包装：
卷带（TR）
- 晶体管类型：
LDMOS
- 频率：
2.12GHz
- 增益：
15.5dB
- 功率 - 输出：
44W
- 封装/外壳：
NI-1230
- 供应商器件封装：
NI-1230
- 描述：
FET RF 68V 2.12GHZ NI-1230
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
2019+ |
NI-1230 |
6992 |
原厂渠道 可含税出货 |
询价 | ||
FREESCALE |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
Freescale |
811 |
45 |
询价 | ||||
Freescale |
16+ |
NI-1230 |
450 |
原装现货假一罚十 |
询价 | ||
FREESCALE |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Freescale |
2018+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
询价 | ||
freescale |
原包装 |
3560 |
原装正品!假一罚十!现货库存热卖 |
询价 | |||
FREESCALE |
23+ |
375D-05 |
200 |
现货供应 |
询价 | ||
FREESCALE |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
FREESCAL |
21+ |
16500 |
进口原装正品现货 |
询价 |
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