RF Power Field Effect Transistors

文件：444.28 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：444.28 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：444.28 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1930-1990 MHz, 19 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs

Overview The MRF6S19120HR3 and MRF6S19120HSR3 are designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.\nArchived content is no lon \n•Typical Single–Carrier N–CDMA Performance for VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., f = 1990 MHz, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.\nPower Gain: 15 dB\n\tDrain Efficiency: 21.5&;

恩XP