RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：597.96 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：548.83 Kbytes 页数：17 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：634.83 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：548.83 Kbytes 页数：17 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：634.83 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2300-2700 MHz，3 W平均值，28 V单载波W-CDMA射频功率LDMOS

The MRF6S27015NR1 and MRF6S27015GNR1 are designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., f = 2600 MHz, Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain: 14 dBDrain Efficiency: 22%ACPR @ 5 MHz Offset: –45 dBc in 3.84 MHz Channel Bandwidth\n• Capable of ;

恩XP