RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

文件：630.01 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

文件：630.01 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

文件：711.91 Kbytes 页数：18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

文件：711.91 Kbytes 页数：18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

文件：711.91 Kbytes 页数：18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：628.74 Kbytes 页数：16 Pages

Fairchild

仙童半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：628.74 Kbytes 页数：16 Pages

Fairchild

仙童半导体

880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs

OverviewReplaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. The MRF6S9060MR1 and MRF6S9060MBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices \n•Typical Single-Carrier N–CDMA Performance @ 880 MHz, \n•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA,\n•Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, \n•Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power\n•Characterized with Series Equivalent Large–S;

恩XP

880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs

OverviewMRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details.MRF6S9060NBR1 no longer manufactured. \n•Typical Single-Carrier N–CDMA Performance @ 880 MHz, \nVDD = 28 Volts,\nIDQ = 450 mA, Pout = 14 Watts Avg.,\nIS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel \nBandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.\nPower Gain: 21.4 dB\n\tDrain Efficiency: 32.1&;

恩XP

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

ONSEMI

安森美半导体