RF Power Field Effect Transistors

文件：475.55 Kbytes 页数：11 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：474.84 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：475.55 Kbytes 页数：11 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：475.55 Kbytes 页数：11 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：474.84 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：475.55 Kbytes 页数：11 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

880 MHz, 27 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs

OverviewMRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. \n•Typical Single–Carrier N–CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 950mA, Pout = 27 Watts Avg., Full Frequency Band, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.\nPower Gain: 19.2 dB\n\tDrain Eff;

恩XP