MRF6S9130H中文资料880 MHz, 27 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

OverviewMRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details.

特性 Features

•Typical Single–Carrier N–CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 950mA, Pout = 27 Watts Avg., Full Frequency Band, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 19.2 dB
\tDrain Efficiency: 30.5%
\tACPR @ 750 kHz Offset: –48.1 dBc @ 30 kHz Bandwidth

GSM Application
•Typical GSM Performance: VDD = 28 Volts, IDQ = 950 mA, Pout =
130 Watts, Full Frequency Band (921–960 MHz)
Power Gain: 18 dB
\tDrain Efficiency: 63%

GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 950 mA, Pout =
56 Watts Avg., Full Frequency Band (921–960 MHz)
Power Gain: 18.5 dB
\tDrain Efficiency: 44%
\tSpectral Regrowth @ 400 kHz Offset = –63 dBc
\tSpectral Regrowth @ 600 kHz Offset = –75 dBc
\tEVM: 1.5% rms

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.