MRF6S19100N中文资料1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

The MRF6S19100NR1 and MRF6S19100NBR1 are designed for N–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

特性 Features

• Typical 2–Carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 22 Watts Avg., f = 1987 MHz, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain: 14.5 dBDrain Efficiency: 25.5%IM3 @ 2.5 MHz Offset: –37 dBc in 1.2288 MHz BandwidthACPR @ 885 kHz Offset: –51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead–Free Terminations
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.