MRF6S19100H中文资料1930-1990 MHz，22 W平均值，28 V，双载波W-CDMA射频功率LDMOS数据手册恩XP规格书

描述 Description

The MRF6S19100HR3 and MRF6S19100HSR3 are designed for N–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

特性 Features

• Typical 2–Carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 22 Watts Avg., f = 1987 MHz, IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain:16.1 dBDrain Efficiency:28%IM3 @ 2.5 MHz Offset: –37 dBc in 1.2288 MHz Channel BandwidthACPR @ 885 kHz Offset: –51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.