MRF6P21190HR6中文资料2110-2170 MHz, 44 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFET数据手册恩XP规格书

描述 Description

Overview The MRF6P21190HR6 is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
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特性 Features

•Typical 2-Carrier W–CDMA Performance: VDD = 28 Volts,
IDQ = 1900 mA, Pout = 44 Watts Avg., f = 2112 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain: 15.5 dB
\tDrain Efficiency: 26.5%
\tIM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
\tACPR @ 5 MHz Offset: –40 dBc in 3.84 MHz Channel Bandwidth

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

•RoHS Compliant

•In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.