MRF6S18060NB数据手册恩XP中文资料规格书

描述 Description

The MRF6S18060NR1 and MRF6S18060NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

特性 Features

GSM Application
• Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHzPower Gain: 15 dBDrain Efficiency: 50%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805–1880 MHz or 1930–1990 MHz)Power Gain: 15.5 dBSpectral Regrowth @ 400 kHz Offset = –62 dBcSpectral Regrowth @ 600 kHz Offset = –76 dBcEVM: 2% rms
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.