MRF6S18060M中文资料1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

OverviewReplaced by MRF6S18060NR1(NBR1). There are no form, fit or function changes with this part replacement. The MRF6S18060MR1 and MRF6S18060MBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, andmulticarrier amplifier applications.

特性 Features

GSM Application
•Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW,
\tFull Frequency Band (1805–1880 MHz or 1930–1990 MHz)
Power Gain: 15 dB
\tDrain Efficiency: 50%

GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA,
\tPout = 25 Watts Avg., Full Frequency Band (1805–1880 MHz or 1930–1990 MHz)
Power Gain: 15.5 dB
\tSpectral Regrowth @ 400 kHz Offset = –62 dBc
\tSpectral Regrowth @ 600 kHz Offset = –76 dBc
\tEVM: 2% rms

•Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•200°C Capable Plastic Package

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.