MRF6S18100N中文资料1805-1990 MHz, 100 W, 28 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF6S18100NR1 and MRF6S18100NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
Archived content is no longer updated and is made available for historical reference only.

特性 Features

GSM Application
•Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA,
\tPout = 100 Watts, f = 1990 MHz
Power Gain: 14.5 dB
\tDrain Efficiency: 49%

GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
\tPout = 40 Watts Avg., Full Frequency Band (1805–1880 MHz or 1930–1990 MHz)
Power Gain: 15 dB
\tDrain Efficiency: 35%
\tSpectral Regrowth @ 400 kHz Offset = –63 dBc
\tSpectral Regrowth @ 600 kHz Offset = –76 dBc
\tEVM: 2% rms

•Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

•225°C Capable Plastic Package

•RoHS Compliant.

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.