MRF6S23100H中文资料2300-2400 MHz, 20 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF6S23100HR3 and MRF6S23100HSR3 are designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications.
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特性 Features

•Typical 2-Carrier W–CDMA Performance: VDD = 28 Volts,
IDQ = 1000 mA, Pout = 20 Watts Avg., f = 2390 MHz, Channel Bandwidth
= 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain: 15.4 dB
\tDrain Efficiency: 23.5%
\tIM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
\tACPR @ 5 MHz Offset: –40.5 dBc in 3.84 MHz Channel Bandwidth

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.