MRF6S20010N数据手册恩XP中文资料规格书

描述 Description

The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.

特性 Features

• Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEPPower Gain: 15.5 dBDrain Efficiency: 36%IMD: –34 dBc
• Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130–2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% ProbabilityPower Gain: 15.5 dBDrain Efficiency: 15%IM3 @ 10 MHz Offset: –47 dBc in 3.84 MHz Channel BandwidthACPR @ 5 MHz Offset: –49 dBc in 3.84 MHz Channel Bandwidth
• Typical Single–Carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930–1990 MHz),IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain: 15.5 dBDrain Efficiency: 16%ACPR @ 885 kHz Offset = –60 dBc in 30 kHz Bandwidth
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805–1880 MHz)Power Gain: 16 dBDrain Efficiency: 33%EVM: 1.3% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.