MRF6S9125N中文资料865-960 MHz, 27 W Avg., 28 V, Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

OverviewMRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details.

特性 Features

N–CDMA Application
•Typical Single-Carrier N–CDMA Performance: VDD = 28 Volts,
IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band (865–960 MHz),
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 20.2 dB
\tDrain Efficiency: 31%
\tACPR @ 750 kHz Offset: –47.1 dBc in 30 kHz Bandwidth

GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700mA, Pout =
60 Watts Avg., Full Frequency Band (865–960 MHz or 921–960 MHz)
Power Gain: 20 dB
\tDrain Efficiency: 40%
\tSpectral Regrowth @ 400 kHz Offset = –63 dBc
\tSpectral Regrowth @ 600 kHz Offset = –78 dBc
\tEVM: 1.8% rms

GSM Application
•Typical GSM Performance: VDD = 28 Volts, IDQ = 700mA, Pout =
125 Watts, Full Frequency Band (921–960 MHz)
Power Gain: 19 dB
\tDrain Efficiency: 62%

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•225°C Capable Plastic Package

•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.