MRF6S9060N中文资料880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs数据手册恩XP规格书

描述 Description

OverviewMRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details.MRF6S9060NBR1 no longer manufactured.

特性 Features

•Typical Single-Carrier N–CDMA Performance @ 880 MHz,
VDD = 28 Volts,
IDQ = 450 mA, Pout = 14 Watts Avg.,
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 21.4 dB
\tDrain Efficiency: 32.1%
\tACPR @ 750 kHz Offset: –47.6 dBc @ in 30 kHz Bandwidth

GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 21 Watts Avg., Full Frequency Band (921–960 MHz)
Power Gain: 20 dB
\tDrain Efficiency: 46%
\tSpectral Regrowth @ 400 kHz Offset = –62 dBc
\tSpectral Regrowth @ 600 kHz Offset = –78 dBc
\tEVM: 1.5% rms

GSM Application
•Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 60 Watts, Full Frequency Band (921–960 MHz)
Power Gain: 20 dB
\tDrain Efficiency: 63%

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Integrated ESD Protection

•225°C Capable Plastic Package

•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

•TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

•TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.