RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

文件：711.91 Kbytes 页数：18 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

文件：711.91 Kbytes 页数：18 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

文件：711.91 Kbytes 页数：18 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：628.74 Kbytes 页数：16 Pages

FAIRCHILD

仙童半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：628.74 Kbytes 页数：16 Pages

FAIRCHILD

仙童半导体

880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs

OverviewMRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details.MRF6S9060NBR1 no longer manufactured. \n•Typical Single-Carrier N–CDMA Performance @ 880 MHz, \nVDD = 28 Volts,\nIDQ = 450 mA, Pout = 14 Watts Avg.,\nIS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel \nBandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.\nPower Gain: 21.4 dB\n\tDrain Efficiency: 32.1&;

恩XP

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

ONSEMI

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