N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：208.63 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：522.47 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：687.18 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：643.65 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

The MRF6V2300NR1 and MRF6V2300NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHzPower Gain: 25.5 dBDrain Efficiency: 68%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Qua;

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