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MRF6S19100HR3

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat

文件:413.41 Kbytes 页数:12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6S19100HR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:427.96 Kbytes 页数:12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6S19100HR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:413.11 Kbytes 页数:11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6S19100HR3_06

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:427.96 Kbytes 页数:12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6S19100HR3_08

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:413.11 Kbytes 页数:11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

详细参数

  • 型号:

    MRF6S19100HR3

  • 功能描述:

    射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 频率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 输出功率:

    100 W

  • 封装/箱体:

    NI-780-4

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
FREESCALE/飞思卡尔
25+
NI-780
32360
FREESCALE/飞思卡尔全新特价MRF6S19100HR3即刻询购立享优惠#长期有货
询价
FREESCALE
2019+
SMD
6992
原厂渠道 可含税出货
询价
FREESCALE
23+
1688
房间现货库存:QQ:373621633
询价
FREESCAL
25+
高频管
6500
十七年专营原装现货一手货源,样品免费送
询价
FREESCALE
2430+
高频管
8540
只做原装正品假一赔十为客户做到零风险!!
询价
FREESCALE/飞思卡尔
2025+
3800
原装进口价格优 请找坤融电子!
询价
Freescale
23+
原厂原封□□□
20000
原厂授权代理分销现货只做原装正迈科技样品支持现货
询价
Freescale
24+
NI-780
750
原装现货假一罚十
询价
FREESCALE
24+
SMD
1680
FREESCALE专营品牌进口原装现货假一赔十
询价
FREESCA
18+
NI-780S
85600
保证进口原装可开17%增值税发票
询价
更多MRF6S19100HR3供应商 更新时间2026-1-31 17:25:00