RF Power Field Effect Transistor

文件：1.0063 Mbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

470-860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 vol

文件：879.78 Kbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

470-860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 vol

文件：879.78 Kbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：1.0063 Mbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：1.0063 Mbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：1.0063 Mbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

470-860 MHz, 300 W, 32 V Lateral N-Channel RF Power MOSFETs

OverviewMRF6P3300HR3/HR5 replaced by MRFE6P3300HR3. Refer to Device Migration PCN12895 for more details. \n•Typical Narrowband Two-Tone Performance @ 860 MHz, VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP\nPower Gain: 20.2 dB\n\tDrain Efficiency: 44.1%\n\tIMD: –30.8 dBc\n\n•Typical Narrowband DVB-T OFDM Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QA;

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