RF Power Field Effect Transistors

文件：409.39 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：409.39 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：409.39 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1930-1990 MHz, 56 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview The MRF6S19200HR3 and MRF6S19200HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio applications.\nArchived content is no longer \n•Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1,\n64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.\nPower Gain:17.9 dB\nDrain Efficiency:29;

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