MRF5S21045

RF Power Field Effect Transistors

MRF5S21045NR1

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplicat

MRF5S21045MBR1

RF Power Field Effect Transistors

MRF5S21045MR1

RF Power Field Effect Transistors

MRF5S21045NBR1

RF Power Field Effect Transistors

MRF5S21045NBR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S21045NR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S21045NR1

RF Power Field Effect Transistors

MRF5S21045NR1_09

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S21045MR1

包装：卷带（TR） 封装/外壳：TO-270-4 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 68V 2.17GHZ TO270-4

MRF5S21045NBR1

包装：卷带（TR） 封装/外壳：TO-272BB 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 68V 2.12GHZ TO272-4

MRF5S21045NR1

包装：卷带（TR） 封装/外壳：TO-270AB 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 68V 2.12GHZ TO270-4