The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula

文件：404.48 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula

文件：404.48 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

2170 MHz, 28 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET

Overview Replaced by MRF5S21130HSR3. \"H\" suffix indicates lower thermal resistance package. The MRF5S21130SR3 is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS \n•Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts,\nIDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =\n3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz\nand f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW\n@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8;

恩XP

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula

文件：404.48 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉