首页 >MRF5S21130>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MRF5S21130 | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforW–CDMAbasestationapplicationsatfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellula | MotorolaMotorola, Inc 摩托罗拉 | Motorola | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationsatfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLappl | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationsatfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLappl | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforW–CDMAbasestationapplicationsatfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellula | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforW–CDMAbasestationapplicationsatfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellula | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforW–CDMAbasestationapplicationsatfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellula | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
包装：卷带（TR） 封装/外壳：SOT-957A 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 2.17GHZ NI-880 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
包装：卷带（TR） 封装/外壳：NI-880S 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 2.17GHZ NI-880S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
包装：卷带（TR） 封装/外壳：NI-880S 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 2.17GHZ NI-880S | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp |
详细参数
- 型号：
MRF5S21130
- 制造商：
MOTOROLA
- 制造商全称：
Motorola, Inc
- 功能描述：
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
MOTOROLA/摩托罗拉 |
2021+ |
465B-03 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
MOT |
2017+ |
24589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | |||
MOTOROLA |
23+ |
TO-63 |
1080 |
专营高频管模块,全新原装! |
询价 | ||
MOTOROLA |
16+ |
原封装 |
1530 |
原装现货假一罚十 |
询价 | ||
MOTOROLA |
N/A |
39 |
询价 | ||||
FREE |
2339+ |
SMD |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
MOT |
24+ |
NA |
5000 |
只做原装公司现货 |
询价 | ||
MOT |
22+ |
2789 |
全新原装自家现货!价格优势! |
询价 | |||
MOT |
1822+ |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 |
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