RF POWER FIELD EFFECT TRANSISTOR

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

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MOTOROLA

摩托罗拉

2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET

OverviewReplaced by MRF5P21240HR6. \"H\" suffix indicates lower thermal resistance package. The MRF5P21240R6 is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/ce \n•Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts,\nIDQ = 2 x 1100 mA, f1 = 2135 MHz,f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz and f2 +5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 –10 MHz and f2 +10 MHz, Each Carrier ;

恩XP

TO-270

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

高频管

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市翔睿腾科技有限公司

SMD

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市向鸿伟业电子有限公司