N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD

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MOTOROLA

摩托罗拉

1990 MHz, 26 W AVG., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFET

Overview Replaced by MRF5S19130HR3. \"H\" suffix indicates lower thermal resistance package. The MRF5S19130R3 is designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. \n\n•Typical 2–Carrier N–CDMA Performance for VDD = 28 Volts,\nIDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz,\nIS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)\n1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured\nover a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. D;

恩XP

TO-270

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

高频管

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市翔睿腾科技有限公司

SMD

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市向鸿伟业电子有限公司