RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

文件：162.77 Kbytes 页数：6 Pages

MICROSEMI

美高森美

Package：微型-X 陶瓷 84C；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 18V 5GHZ MICRO X

MICROSEMI

美高森美

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

High Precision 10 Volt Reference

General Description Maxim’s MX581 is a three-terminal, temperaturecompensated, bandgap voltage reference which provides a precision 10V output from an unregulated input of 12.5V to 30V. Laser trimming is used to minimize initial error and temperature drift, to as low as 10mV and 15ppm/°C with the

文件：196.78 Kbytes 页数：7 Pages

MAXIM

美信

High Precision 10 Volt Reference

General Description Maxim’s MX581 is a three-terminal, temperaturecompensated, bandgap voltage reference which provides a precision 10V output from an unregulated input of 12.5V to 30V. Laser trimming is used to minimize initial error and temperature drift, to as low as 10mV and 15ppm/°C with the

文件：196.78 Kbytes 页数：7 Pages

MAXIM

美信

High Precision 10 Volt Reference

General Description Maxim’s MX581 is a three-terminal, temperaturecompensated, bandgap voltage reference which provides a precision 10V output from an unregulated input of 12.5V to 30V. Laser trimming is used to minimize initial error and temperature drift, to as low as 10mV and 15ppm/°C with the

文件：196.78 Kbytes 页数：7 Pages

MAXIM

美信