2110-2170 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET

Overview The MRF5P21180HR6 is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.\nArchived content is no longer updated and is m \n•Typical 2-Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 38 Watts Avg., Channel Bandwidth = 3.84 MHz, \nPAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 14 dB\n\tDrain Efficiency: 25.5%\n\tIM3 @ 10 MHz Offset:  –37.5 dBc in 3.84 MHz Channel Bandwidth\n\tACPR @ 5 M;

恩XP

TO-270

FREESCALEFreescale Semiconductor, Inc

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上传：深圳庞田科技有限公司

高频管

FREESCALEFreescale Semiconductor, Inc

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上传：深圳市翔睿腾科技有限公司

SMD

FREESCALEFreescale Semiconductor, Inc

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上传：深圳市向鸿伟业电子有限公司

高频

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市华来深电子有限公司