RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2110-2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview The MRF5P21240HR6 is designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications..\nArchived content is no longer updated and is \n•Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2200 mA, Pout = 52 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 13 dB\n\tDrain Efficiency: 24%\n\tIM3 @ 10 MHz Offset:  –36 dBc in 3.84 MHz Channel Bandwidt;

恩XP

TO-270

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

高频管

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市翔睿腾科技有限公司

SMD

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市向鸿伟业电子有限公司