RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50 • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Sold

文件：208.6 Kbytes 页数：5 Pages

MICROSEMI

美高森美

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50 • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Sold

文件：136.27 Kbytes 页数：5 Pages

ADPOW

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

Package：Macro-X；包装：带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 16V 870MHZ MACRO X

MICROSEMI

美高森美

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50 • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Sold

文件：136.27 Kbytes 页数：5 Pages

ADPOW

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

射频(RF)双极晶体管 RF Transistor

ASI Semiconductor

包装：带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 16V 870MHZ

MICROSEMI

美高森美

包装：带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 16V 870MHZ

MICROSEMI

美高森美