RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

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Motorola

摩托罗拉

1990 MHz, 38 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET

Overview Replaced by MRF5P20180HR6. \"H\" suffix indicates lower thermal resistance package. The MRF5P20180R6 is designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/c \n\n•Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts,\nIDQ = 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz, Channel Bandwidth = 3.84 MHz, \nAdjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz\nand f2 +5 MHz. Distortion Products Measured over a 3.84 MHz BW\n@ f1 –10 MHz and f2 +10 MHz, Each Ca;

恩XP

TO-270

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

高频管

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市翔睿腾科技有限公司

SMD

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市向鸿伟业电子有限公司