RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, commo

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MOTOROLA

摩托罗拉

470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF373R1\" removed from active portfolio. Possible Replacement Part: \"MRF373ALR1\".The MRF373R1 is designed for broadband commercialand industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, com \n•Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture\t\t\t\nOutput Power — 60 Watts\nPower Gain — 13 dB\nEfficiency — 50%\n•Typical Performance at 860 MHz, 28 Volts, Broadband Push&#–Pull Fixture\nOutput Power — 100 Watts (PEP)\nPower Gain — 11.2 dB\nEfficiency — 40%\nIMD — ;

恩XP

高频管

M/A-COM

上传：深圳市毅创腾电子科技有限公司

TO-59

MOTOROLA

摩托罗拉

上传：深圳市克雷威尔科技有限公司

TSSOP16

MICROCHIP

微芯科技

上传：深圳市力拓辉电子有限公司