NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF316 is Designed for Class C Power Amplifier Applications up to 200 MHz. FEATURES: •PG= 10 dB min. at 80 W/ 150 MHz • Withstands 30:1Load VSWR • Omnigold™ Metalization System

文件：19.54 Kbytes 页数：1 Pages

ASI

The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V

Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed performance at 150 MHz, 28 Vdc Output power = 80 W Minimum gain = 10 dB • Built–in matching network for broadband operation • 100 tested for load mismatch at all phase an

文件：223.9 Kbytes 页数：6 Pages

MA-COM

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

文件：133.07 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

The RF Line NPN Silicon RF Power Transistor

Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed performance at 150 MHz, 28 Vdc Output power = 80 W Minimum gain = 10 dB • Built–in matching network for broadband operation • 100 tested for load mism

文件：159.36 Kbytes 页数：5 Pages

MACOM

NPN Silicon RF power transistor

Description: MRF316 is designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range.

文件：45.88 Kbytes 页数：2 Pages

ELEFLOW

The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V

文件：223.9 Kbytes 页数：6 Pages

MA-COM

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe MRF316 is Designed for Class C Power Amplifier Applications up to 200 MHz.\nFEATURES:\n•PG= 10 dB min. at 80 W/ 150 MHz\n• Withstands 30:1Load VSWR\n• Omnigold™ Metalization System

ASI Semiconductor

NPN SILICON RF POWER Transistor

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON. . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range.\n• Guaranteed Performance at 150 MHz, 28 Vdc\n   Output Power = 80 Watts\n   Minimum Gain = 10 dB\n• Built–In Mat

恩XP

Trans RF BJT NPN 35V 9A 4-Pin Case 316-01

NJS

新泽西半导体

Package：316-01；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：TRANS RF NPN 35V 9A 316-01

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