RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

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Motorola

摩托罗拉

RF Power Field Effect Transistors

文件：282.21 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview MRF281SR1 removed from active portfolio. View replacement parts via Part Number Search. \n•Specified Two-Tone Performance @ 1930 and 2000 MHz, 26 Volts\nOutput Power = 4 Watts PEP\n\tPower Gain = 11 dB\n\tEfficiency = 30%\n\tIntermodulation Distortion = –29 dBc\n\n•Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power\n\n•Excellent Thermal Stability\n\n•Charact;

恩XP

RF Power Field Effect Transistors

文件：282.21 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体