MRF281SR1

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPOWERFIELDEFFECTTRANSISTORS N–ChannelEnhancement–ModeLateralMOSFETs DesignedfordigitalandanalogcellularPCNandPCSbasestationapplicationswithfrequenciesfrom1000to2500MHz.CharacterizedforoperationClassAandClassABat26volts

MRF281SR1

2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET; \n•Specified Two-Tone Performance @ 1930 and 2000 MHz, 26 Volts\nOutput Power = 4 Watts PEP\n\tPower Gain = 11 dB\n\tEfficiency = 30%\n\tIntermodulation Distortion = –29 dBc\n\n•Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power\n\n•Excellent Thermal Stability\n\n•Characterized with Series Equivalent Large-Signal Impedance Parameters\n\n•S-Parameter Characterization at High Bias Levels\n\n•RoHS Compliant\n\n•Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.\n\n;

Overview MRF281SR1 removed from active portfolio. View replacement parts via Part Number Search.

ETC

MRF281SR1

RF Power Field Effect Transistors

MRF281SR1_06

RF Power Field Effect Transistors