RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

文件：311.65 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

文件：282.21 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview The MRF281ZR1 is designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.Archived content is no longer updated and is made av \n•Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts\nOutput Power = 4 Watts PEP\n\tPower Gain = 11 dB\n\tEfficiency = 30%\n\tIntermodulation Distortion = –29 dBc\n\n•Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power\n\n•Excellent Thermal Stability\n\n•Charact;

恩XP

恩智浦

M/A-COM
高频管

M/A-Com

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MOTOROLA
TO-59

Motorola

摩托罗拉

上传：深圳市克雷威尔科技有限公司