RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-95

文件：425.44 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz,

文件：390.98 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

恩XP

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — -47 dBc @ 30 k

文件：594.71 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-95

文件：425.44 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-95

文件：425.44 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — -47 dBc @ 30 k

文件：594.71 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz,

文件：390.98 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz,

文件：390.98 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs

Overview The MRF19030LR3 and MRF19030LSR3 are designed for Class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.\nArchived content is no longer updated and is made available for historical reference \n•CDMA Performance @ 1930 MHz, 26 Volts \nIS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13\n\t885 kHz:  –47 dBc in 30 kHz BW\n\t1.25 MHz:  –55 dBc in 12.5 kHz BW\n\t2.25 MHz:  –55 dBc in 1 MHz BW\n\tOutput Power:  4.5 Watts Avg.\n\tPower Gain:  13.5 dB\n\tEfficiency:  17%\n\n•Capable of ;

恩XP