RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-95

文件：425.44 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — -47 dBc @ 30 k

文件：594.71 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TO-272

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

TO-272

FREESCALE/飞思卡尔

上传：深圳庞田科技有限公司

TO-272

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司