RF POWER TRANSISTORS NPN SILICON

The RF Line Power Transistors . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60 • Diffused Emitter Re

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MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF1946 is Designed for 12.5 V 175 MHz Large-SignalPower Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

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ASI

30 W, 136–220 MHz RF POWER TRANSISTORS NPN SILICON

The RF Line Power Transistors. . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.• High Common Emitter Power Gain\n• Specified 12.5 V, 175 MHz Performance\n   Output Power = 30 Watts\n   Power Gain = 10 dB\n   Efficiency = 60%\n• Diffused Emitter Res

恩XP

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe MRF1946 is Designed for 12.5 V 175 MHz Large-SignalPower Amplifier Applications.FEATURES INCLUDE:\n• High Common Emitter Power Gain\n• Output Power = 30 W

ASI Semiconductor

Trans RF BJT NPN 16V 8A 4-Pin Case 211-07

NJS

新泽西半导体

RF POWER TRANSISTORS NPN SILICON

The RF Line Power Transistors . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60 • Diffused Emitter Re

文件：141.74 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

文件：33.62 Kbytes 页数：1 Pages

ASI