RF Power Field Effect Transistors

文件：415.75 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

文件：362.29 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

1930-1990 MHz, 125 W, 26 V Lateral N-Channel RF Power MOSFETs

Overview MRF19125R3, MRF19125SR3 removed from active portfolio. View replacement parts via Part Number Search. \n•Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distort;

恩XP

RF Power Field Effect Transistors

文件：415.75 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

文件：362.29 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：415.75 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

文件：362.29 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉