RF Power Field Effect Transistor

2110-2170 MHz, 120 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. • W-CDM

文件：359.98 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2110-2170 MHz, 120 W, 28 V, Lateral N-Channel RF Power MOSFET

Overview MRF21120R6 removed from active portfolio. View replacement parts via Part Number Search. \n•W–CDMA Performance @ –45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch\nOutput Power: 14 Watts (Avg.)\n\tPower Gain: 11.5 dB\n\tEfficiency: 16%\n\n•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 120 Watts CW Output Power\n\n•Internally Matched for Ease of Use\n\n•High Gain, High Efficiency, and Hig;

恩XP

120 Watts, 2110-2170 MHz PD21120R6 PUSH/PULL LATERAL MOSFET

文件：488.27 Kbytes 页数：6 Pages

TRIQUINT

Module-12

MICROCHIP/微芯

上传：深圳市明嘉莱科技有限公司

Module-12

MICROCHIP/微芯

上传：深圳市明嘉莱科技有限公司