BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

文件：166.78 Kbytes 页数：6 Pages

Motorola

摩托罗拉

The RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

文件：193.65 Kbytes 页数：5 Pages

MACOM

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

The RF Line Controlled ?쏲??Broadband Power Transistor 80W, 100 to 500MHz, 28V

Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed performance @ 400 MHz, 28 Vdc Output power = 80 W over 225 to 400 MHz Band Minimum gain = 7.3 dB @ 400 MHz • Built–in matching network for broadband operation using

文件：239.04 Kbytes 页数：6 Pages

MA-COM

The RF Line Controlled ?쏲??Broadband Power Transistor

文件：239.04 Kbytes 页数：6 Pages

MA-COM

Bipolar

Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. ·Guaranteed Performance @ 400 MHz, 28 Vdc: Output Power = 80 W over 225 to 400 MHz Band, Minimum Gain = 7.3 dB @ 400 MHz\n·Characterized for 100 =8 500 MHz\n·Gold Metallization System for High Reliability applications\n·100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR\n·Built–In ;

MACOM

Trans GP BJT NPN 33V 9A 4-Pin Case 316-01

NJS

Package：316-01；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 33V 316-01

MACOM Technology Solutions

The RF Line Controlled Broadband Power Transistor

文件：239.04 Kbytes 页数：6 Pages

MA-COM

The RF Line Controlled ?쏲??Broadband Power Transistor

文件：753.09 Kbytes 页数：7 Pages

MA-COM