NPN SILICON RF POWER TRANSISTOR

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MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

恩XP

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin

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NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体

Family Extended Power, Design Flexible,Integrated Off-line Switcher

Description TOPSwitch-GX uses the same proven topology as TOPSwitch, cost effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry onto a single CMOS chip. Many new functions are integrated to reduce system cost and improve design flexi

文件：771.93 Kbytes 页数：48 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司