RF Power Field Effect Transistor

文件：333.54 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：520.03 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

2110-2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET

Overview MRF21180R6 removed from active portfolio. View replacement parts via Part Number Search. \n•Typical 2-Carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1700 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, \nEach Carrie;

恩XP

RF Power Field Effect Transistor

文件：333.54 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体