MRF21180R6中文资料2110-2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET数据手册恩XP规格书

描述 Description

Overview MRF21180R6 removed from active portfolio. View replacement parts via Part Number Search.

特性 Features

•Typical 2-Carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1700 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power: 38 Watts (Avg.)
\tPower Gain: 12.1 dB
\tEfficiency: 22%
\tIM3: –37.5 dBc
\tACPR: –41 dBc

•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 170 Watts CW Output Power

•Internally Matched for Ease of Use

•High Gain, High Efficiency, and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Excellent Thermal Stability

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•RoHS Compliant

•In Tape and Reel. R6 suffix = 150 Units per 56 mm, 13 inch Reel.