MRF21125中文资料2110-2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview MRF21125R3, MRF21125SR3 removed from active portfolio. View replacement parts via Part Number Search.

特性 Features

•Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600
mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth = 3.84 MHz,
adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power: 20 Watts
\tEfficiency: 18%
\tGain: 13 dB
\tIM3: –43 dBc
\tACPR: –45 dBc

•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power

•Internally Matched for Ease of Use

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Excellent Thermal Stability

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•RoHS Compliant

•In Tape and Reel. R3 suffix = 250 Units per 56 mm, 13 inch Reel.