MRF21045L中文资料2110-2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF21045LR3 and MRF21045LSR3 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
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特性 Features

•Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels
measured over 3.84 MHz Bandwidth at f1 –5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power = 10 Watts Avg.
\tEfficiency = 23.5%
\tGain = 15 dB
\tIM3 = –37.5 dBc
\tACPR = –41 dBc

•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power

•Internally Matched for Ease of Use

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Excellent Thermal Stability

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 suffix = 250 Units per 32 mm, 13 inch Reel.