MRF20060R中文资料2.0 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistor数据手册恩XP规格书

描述 Description

Overview The MRF20060R is designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of this device makes it ideal for large–signal, common emitter class AB amplifier applications. This device is suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers.MRF20060R removed from active portfolio. Possible Replacement Part: MRF19060R3.

特性 Features

•Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
\tPower Gain — 9.8 dB
\tEfficiency — 33%
\tIntermodulation Distortion —
\t  –32 dBc
•Characterized with Series Equivalent Large–Signal Impedance Parameters
•S–Parameter Characterization at High Bias Levels
•Excellent Thermal Stability
•Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz,
\t60 Watts (PEP) Output Power Applications
\t
\tNote:  Not Suitable for Class A Operation.