MRF19085L中文资料1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF19085LR3 and MRF19085LSR3 are designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
Archived content is no longer updated and is made available for historical reference only.

特性 Features

•Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,
IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
   Output Power: 18 Watts Avg.
   Power Gain: 13.0 dB
   Efficiency: 23%
   ACPR: –51 dB
   IM3: –36.5 dBc

•Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power

•Internally Matched for Ease of Use

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Excellent Thermal Stability

•Characterized with Series Equivalent Large-Signal Impedance Parameters

•Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.