MRF21010L中文资料2110-2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF21010LR1 and MRF21010LSR1 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
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特性 Features

•Typical W–CDMA Performance: –45 dBc ACPR, 2170 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
\tPower Gain — 13.5 dB
\tEfficiency — 21%

•Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz, 10 Watts CW Output Power

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Excellent Thermal Stability

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.