MRF1K50GN中文资料Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V数据手册恩XP规格书

描述 Description

These high ruggedness devices, MRF1K50N and MRF1K50GN, are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

特性 Features

• High drain-source avalanche energy absorption capability
• Unmatched input and output allowing wide frequency range utilization
• Device can be used single-ended or in a push-pull configuration
• Characterized from 30 to 50 V for ease of use
• Suitable for linear application
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• RoHS compliant
• Recommended driver: MRFE6VS25N (25 W)
Popular Applications
• Industrial, Scientific, Medical (ISM)
• Laser generation

• Plasma etching

• Particle accelerators

• MRI, diathermy, skin laser and ablation

• Industrial heating, welding and drying systems
• Broadcast
• Radio broadcast

• VHF TV broadcast
• Aerospace
• VHF omnidirectional range (VOR)
• HF and VHF communications

• Weather radar
• Mobile Radio
• VHF and UHF base stations